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STPSC8H065D Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STPSC8H065D Arkusz danych(HTML) 1 Page - STMicroelectronics |
1 / 14 page This is information on a product in full production. January 2014 DocID023603 Rev 4 1/14 STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 V rms – Typical package capacitance: 7 pF Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. K K A K K A A NC NC K A K A TO-220AC STPSC H065D 8 TO-220AC Ins STPSC H065D 8I DPAK STPSC H065B-TR 8 DPAK 2 STPSC H065 -TR 8G Table 1. Device summary Symbol Value IF(AV) 8 A VRRM 650 V Tj (max) 175 °C www.st.com |
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