FQD5P10TM datasheet(2/8 Pages) FAIRCHILD

Numer części	FQD5P10TM

Szczegółowy opis	P-Channel QFET MOSFET -100 V, -3.6 A, 1.05?

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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FQD5P10 Rev. C0

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Electrical Characteristics

TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 6.4mH, IAS = -3.6A, VDD = -25V, RG = 25 Starting TJ = 25°C

3. ISD ≤ -4.5A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C

4. Essentially independent of operating temperature

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit



Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 A

-100

--

V

BVDSS

/

TJ

Breakdown Voltage Temperature

Coefficient

ID = -250 A, Referenced to 25°C

--

-0.1

--

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = -100 V, VGS = 0 V

--

-1

A

VDS = -80 V, TC = 125°C

--

-10

A

IGSSF

Gate-Body Leakage Current, Forward

VGS = -30 V, VDS = 0 V

--

-100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = 30 V, VDS = 0 V

--

100

nA



On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = -250 A

-2.0

--

-4.0

V

RDS(on)

Static Drain-Source

On-Resistance

VGS = -10 V, ID = -1.8 A

--

0.82

1.05



gFS

Forward Transconductance

VDS = -40 V, ID = -1.8 A

--

2.3

--

S



Dynamic Characteristics

Ciss

Input Capacitance

VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

--

190

250

pF

Coss

Output Capacitance

--

70

90

pF

Crss

Reverse Transfer Capacitance

--

18

25

pF



Switching Characteristics

td(on)

Turn-On Delay Time

VDD = -50 V, ID = -4.5 A,

RG = 25 

(Note 4)

--

9

30

ns

tr

Turn-On Rise Time

--

70

150

ns

td(off)

Turn-Off Delay Time

--

12

35

ns

tf

Turn-Off Fall Time

--

30

70

ns

Qg

Total Gate Charge

VDS = -80 V, ID = -4.5 A,

VGS = -10 V

(Note 4)

--

6.3

8.2

nC

Qgs

Gate-Source Charge

--

1.7

--

nC

Qgd

Gate-Drain Charge

--

3.0

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

-3.6

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

-14.4

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = -3.6 A

--

-4.0

V

trr

Reverse Recovery Time

VGS = 0 V, IS = -4.5 A,

dIF / dt = 100 A/s

--

85

--

ns

Qrr

Reverse Recovery Charge

--

0.27

--

C

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