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TS3DDR32611 Arkusz danych(PDF) 4 Page - Texas Instruments |
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TS3DDR32611 Arkusz danych(HTML) 4 Page - Texas Instruments |
4 / 12 page TS3DDR32611 SCDS347A – AUGUST 2013 – REVISED SEPTEMBER 2013 www.ti.com ELECTRICAL CHARACTERISTICS TA = –40°C to 85°C, Typical values are at VDD = 3.3V, TA = 25°C, (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VDD supply current in high No load, VTT_EN=ODT_EN= 1.8V, IVDD(HS) VDD = 3.3V 150 220 µA speed mode(1) VDDQ=1.5 V No load, VTT_EN=1.8V, VDD supply current in low IVDD(LS) VDD = 3.3V 150 220 µA speed mode(1) ODT_EN= 0V, VDDQ=1.5V VDD supply current in power No load, VTT_EN=0V,ODT_EN= 0V, IVDD(PD) VDD = 3.3V 1 5 µA down mode(1) VDDQ=1.5V VLDOIN supply current in high or No load, VTT_EN=H, ODT_EN= H or IVLDOIN VDD = 3.3V 1 5 µA low speed mode L, VDDQ=1.5V VLDOIN supply current in power No load, VTT_EN=L, ODT_EN=H or IVLDOIN(PD) VDD = 3.3V 1 5 µA down mode L, VDDQ=1.5V VTT OUTPUT VTT Output voltage VDDQ/2 V |IVTT|< 60 mA -20 ±15 20 Output voltage tolerance to VDDQ = 1.25V, VTTTOL |IVTT|< 550 mA -35 ±25 35 mV 1/2VDDQ 1.35V, 1.5V |IVTT|< 1 A -60 ±35 60 IVTT(SRC) Source current limit VDDQ = 1.5 V VTT=VTTSNS=0.6 V 1000 mA IVTT(SINK) Sink current limit VDDQ = 1.5 V VTT=VTTSNS=0.9 V 1000 mA Max Source or Sink current IVTT(max) VDDQ = 1.5 V VTT=VTTSNS=0 V 1.5 A capability VTT_EN=L, ODT_EN=H or L, IVTT(DIS) VTT Discharge current VDDQ = 0 V 10 mA VTT = 0.5 V, TA=25°C IVTTSNS(BIAS) VTTSNS Input Bias current VTTSNS=VREF No load, VTT_EN=H, ODT_EN= H –0.1 0.1 µA VREF OUTPUT VREF Output voltage VDDQ/2 V Output voltage tolerance to VDDQ = 1.25V, 1.0%*VDD VREFTOL |IVREF|< 5 mA -1.0%*VDDQ mV 1/2VDDQ 1.35V, 1.5V Q IVREF(SRC) Source current limit VDDQ = 1.5V VREF=0 V 10 mA IVREF(SINK) Sink current limit VDDQ = 0V VREF=1.5 V 10 mA VTT_EN=L,ODT_EN=H or L, VVREF(DIS) VREF Discharge current VDDQ = 0V 2 mA VREF=0.5 V, TA = 25°C VDDQ INPUT IVDDQ VDDQ input current VDDQ = 1.5V 30 40 µA ISOLATION SWITCH RON ON-state resistance VDD = 3.3V VI/O = 0.75 V, |IVTT|= 18 mA 1.75 4 Ω RON, FLAT ON-state resistance flatness VDD = 3.3V VI/O = 0 V to 0.75 V, |IVTT|= 18 mA 0.2 0.4 Ω ON-state resistance match ΔRON VDD = 3.3V VI/O = 0.75 V, |IVTT|= 18 mA 0.2 Ω between channels DIGITAL CONTROL INPUTS (VTT_EN, ODT_EN) VIH Input logic high VDD = 3.0 V to 3.6 V 1.3 V VIL Input logic low VDD = 3.0 V to 3.6 V 0.6 V VLHYST Hysteresis voltage 0.5 V ILK Input leak current –1 1 µA OVER-TEMPERATURE PROTECTION Shutdown temperature 150 TOTP Over temperature protection °C Hysteresis 30 (1) For ODT_EN and VTT_EN, If the VIH is less than 1.8V but more than Max VIH, or VIL is more than 0V but less than Max VIL, it will cause the IVDD has the max 25µA increase based on the voltage at ODT_EN and VTT_EN. 4 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links :TS3DDR32611 |
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