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SM30T35AY Arkusz danych(PDF) 4 Page - STMicroelectronics |
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SM30T35AY Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 12 page Characteristics SM30TY 4/12 DocID022065 Rev 3 Figure 3. Peak pulse power dissipation versus initial junction temperature (typical value) Figure 4. Peak pulse power versus exponential pulse duration (Tj initial = 25 °C) P(W) PP 0 500 1000 1500 2000 2500 3000 3500 0 25 50 75 100 125 150 175 T (°C) j 10/1000 µs P (kW) PP 0.1 1.0 10.0 100.0 1000.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 T initial = 25 °C j t( ) P ms Figure 5. Clamping voltage versus peak pulse current (exponential waveform, maximum values) Figure 6. Junction capacitance versus reverse applied voltage for unidirectional types (typical values) I(A) PP 0.1 1.0 10.0 100.0 1000.0 10 100 10/1000 µs 8/20 µs V(V) CL T initial = 25 °C j C(nF) 0.1 1.0 10.0 1 10 100 SM30T18AY SM30T39AY F = 1 MHz V = 30 mV T = 25 °C OSC RMS j V(V) R Figure 7. Junction capacitance versus reverse applied voltage for bidirectional types (typical values) Figure 8. Leakage current versus junction temperature (typical values) 0.1 1.0 10.0 1 10 100 C(nF) SM30T18CAY SM30T39CAY F = 1 MHz V = 30 mV T = 25 °C OSC RMS j V(V) R 1.E+00 1.E+01 1.E+02 1.E+03 25 50 75 100 125 150 V= V RRM I (nA) R T (°C) j |
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