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FQD1N80 Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FQD1N80 Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes: 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 0.5 A T J, Junction Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 ※ N o te s : 1 . Z θ JC( t ) = 2. 78 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC(t ) s ingle p uls e D= 0 .5 0.0 2 0.2 0.0 5 0.1 0.0 1 t 1 , S q uar e W av e P uls e D u r at i on [ s ec] 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T C, Case Temperature [ ℃ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 DC 10 ms 1ms 100μ s Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2 ©2009 Fairchild Semiconductor Corporation FQD1N80 / FQU1N80 Rev. C0 www.fairchildsemi.com |
Podobny numer części - FQD1N80 |
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Podobny opis - FQD1N80 |
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