91212 TKIM/63005SB MSIM TB-00001533 No.8375-1/6

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

September, 2013

SB1003M3

Schottky Barrier Diode

30V, 1A, Low IR, Single MCPH3

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Applications

•

High frequency rectification (switching regulators, converters, choppers)

Features

•

Low switching noise

•

Low leakage current and high reliability due to highly reliable planar structure

•

Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.85mm)

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Repetitive Peak Reverse Voltage

VRRM

30

V

Nonrepetitive Peak Reverse Surge Voltage

VRSM

35

V

Average Output Current

I

O

1.0

A

Surge Forward Current

I

FSM

50Hz sine wave, 1 cycle

10

A

Junction Temperature

Tj

--55 to +125

°C

Storage Temperature

Tstg

--55 to +125

°C

Package Dimensions

unit : mm (typ)

7019A-001

Ordering number : EN8375A

Product & Package Information

• Package

: MCPH3

• JEITA, JEDEC

: SC-70, SOT-323

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

Electrical Connection

1 : Anode

2 : No Contact

3 : Cathode

MCPH3

2.0

0.65

0.3

0.15

12

3

0 to 0.02

SK

TL

SB1003M3-TL-E

3

2

1