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2SC1472 Arkusz danych(PDF) 4 Page - Hitachi Semiconductor

Numer części 2SC1472
Szczegółowy opis  Silicon NPN Epitaxial, Darlington
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Producent  HITACHI [Hitachi Semiconductor]
Strona internetowa  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC1472 Arkusz danych(HTML) 4 Page - Hitachi Semiconductor

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2SC1472 (K)
4
150
50
100
Ambient Temperature Ta (
°C)
600
400
200
0
Maximum Collector Dissipation Curve
10
2.0
6.0
4.0
8.0
Collector to Emitter Voltage VCE (V)
500
300
400
200
100
0
Typical Output Characteristics
IB = 0
2
µA
4
6
8
10
12
20
14
16
18
P
C =
500 mW
50
10
30
20
40
Collector to Emitter Voltage VCE (V)
200
120
160
80
40
0
Typical Output Characteristics
IB = 0
0.5
µA
Pulse
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
P
C = 500
mW
Collector to Emitter Voltage VCE (V)
10,000
1,000
100
10
1.0
0.1
0.01
010
30
20
Collector Cutoff Current vs.
Collector to Emitter Voltage
TC = 25°C
RBE = ∞
50
75
100


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Podobny opis - 2SC1472

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31Kb / 6P		    Silicon NPN Epitaxial, Darlington
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32Kb / 6P		    Silicon NPN Epitaxial, Darlington
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32Kb / 6P		    Silicon NPN Epitaxial, Darlington
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32Kb / 6P		    Silicon NPN Epitaxial, Darlington
2SD2423 HITACHI-2SD2423 Datasheet
34Kb / 6P		    Silicon NPN Epitaxial, Darlington
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33Kb / 6P		    Silicon NPN Epitaxial, Darlington
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159Kb / 6P		    Silicon NPN Epitaxial, Darlington
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156Kb / 6P		    Silicon NPN Epitaxial, Darlington
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