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STP1013 Arkusz danych(PDF) 2 Page - Stanson Technology |
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STP1013 Arkusz danych(HTML) 2 Page - Stanson Technology |
2 / 7 page STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP1013 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) ℃ Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V TA=25℃ -0.45 Continuous Drain Current (TJ=150 ) ℃ TA=80℃ ID -0.35 A Pulsed Drain Current IDM -1.0 A Continuous Source Current (Diode Conduction) IS -0.3 A TA=25℃ 0.27 Power Dissipation TA=70℃ PD 0.16 W Operation Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ |
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