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2SK1625 Arkusz danych(PDF) 3 Page - Hitachi Semiconductor |
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2SK1625 Arkusz danych(HTML) 3 Page - Hitachi Semiconductor |
3 / 6 page 2SK1625(L), 2SK1625(S) 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 600 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µAV DS = 500 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static Drain to source on state resistance R DS(on) — 0.9 1.3 Ω I D = 4 A, VGS = 10 V * 1 Forward transfer admittance |yfs| 4.0 6.5 — S I D = 4 A, VDS = 10 V * 1 Input capacitance Ciss — 1180 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 265 — pF f = 1 MHz Reverse transfer capacitance Crss — 50 — pF Turn-on delay time t d(on) — 15 — ns I D = 4 A, VGS = 10 V, Rise time t r — 50 — ns R L = 7.5 Ω Turn-off delay time t d(off) — 105 — ns Fall time t f —45 — ns Body to drain diode forward voltage V DF — 0.9 — V I F = 7 A, VGS = 0 Body to drain diode reverse recovery time t rr — 370 — ns I F = 7 A, VGS = 0, di F/dt = 100 A/µs Note 1. Pulse test See characteristic curves of 2SK1403. |
Podobny numer części - 2SK1625 |
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Podobny opis - 2SK1625 |
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