2SK1667 datasheet(5/9 Pages) HITACHI

Numer części	2SK1667

Szczegółowy opis	Silicon N-Channel MOS FET

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Producent	HITACHI [Hitachi Semiconductor]

Strona internetowa	http://www.renesas.com/eng

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2SK1667

5

Reverse Drain Current I

(A)

DR

0.2

0.5

1

2

5

10

20

5

10

20

50

100

200

500

di / dt = 100 A / s

V

= 0, Ta = 25°C

µ

GS

Body to Drain Diode Reverse

Recovery Time

Drain to Source Voltage V

(V)

0

10

20

30

40

50

1

10

100

1000

DS

Ciss

Coss

Crss

V

= 0

f = 1 MHz

GS

Typical Capacitance vs. Drain

Source Voltage

Gate Charge Qg (nc)

0

8

500

0

4

8

12

16

20

100 V

50 V

I = 7 A

D

VGS

V

= 50 V

DD

V

= 200 V

DD

VDS

200 V

400

300

200

100

16

24

32

40

Dynamic Input Characteristics

Drain Current I

(A)

0.1

0.2

0.5

1

2

5

10

20

50

100

200

500

V

= 10 V, V

30 V

PW = 2

s, duty

1 %

GS

DD

µ

=

.

td (off)

tf

tr

td (on)

D

5

Switching Characteristics

Podobny numer części - 2SK1667

Producent	Numer części	Arkusz danych	Szczegółowy opis
Renesas Technology Corp	2SK1667	80Kb / 7P	Silicon N Channel MOS FET
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Renesas Technology Corp	2SK1667-E	80Kb / 7P	Silicon N Channel MOS FET

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Podobny opis - 2SK1667

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Hitachi Semiconductor	2SK1157	49Kb / 9P	Silicon N-Channel MOS FET
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	2SK1328	33Kb / 6P	Silicon N-Channel MOS FET
	2SK1526	50Kb / 9P	Silicon N-Channel MOS FET
	2SK619	35Kb / 1P	SILICON N-CHANNEL MOS FET
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Panasonic Semiconductor	2SK1228	35Kb / 2P	Silicon N-Channel MOS FET
Panasonic Semiconductor	2SK615	35Kb / 2P	Silicon N-Channel MOS FET

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2SK1667 Arkusz danych(PDF) 5 Page - Hitachi Semiconductor

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