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FDD1600N10ALZD Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FDD1600N10ALZD Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics of the MOSFET T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDD1600N10ALZD 1600N10ALZD TO-252 5L Tape and Reel 13” 16 mm 2500 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25oC- 0.1 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V - - 1 μA VDS = 80 V, VGS = 0 V, TC = 125oC - - 500 IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 μA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA1.4 2.1 2.8 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 3.4 A - 124 160 m Ω VGS = 5 V, ID = 2.1 A - 175 375 gFS Forward Transconductance VDS = 10 V, ID = 6.8 A - 19.6 - S Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz - 169 225 pF Coss Output Capacitance - 43 55 pF Crss Reverse Transfer Capacitance - 2.04 - pF Coss(er) Energy Related Output Capacitance VDS = 50 V, VGS = 0 V 85 - pF Qg(tot) Total Gate Charge at 10V VGS = 10 V VDD = 50 V, ID = 6.8 A (Note 4) -2.78 3.61 nC Qg(tot) Total Gate Charge at 5V VGS = 5 V 1.5 1.95 nC Qgs Gate to Source Gate Charge - 0.72 - nC Qgd Gate to Drain “Miller” Charge - 0.56 - nC Vplateau Gate Plateau Volatge - 4.02 - V Qsync Total Gate Charge Sync. VDS = 0 V, ID = 3.4 A - 2.5 - nC Qoss Output Charge VDS = 50 V, VGS = 0 V - 5.2 - nC td(on) Turn-On Delay Time VDD = 50 V, ID = 6.8 A, VGS = 10 V, RG = 4.7 Ω (Note 4) -7 24 ns tr Turn-On Rise Time - 2 14 ns td(off) Turn-Off Delay Time - 13 36 ns tf Turn-Off Fall Time - 2 14 ns ESR Equivalent Series Resistance (G-S) f = 1 MHz - 2.1 - Ω IS Maximum Continuous Drain to Source Diode Forward Current - - 6.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 13.6 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6.8 A - - 1.3 V trr Reverse Recovery Time VGS = 0 V, ISD = 6.8 A, VDS = 50 V, dIF/dt = 100 A/μs -37 - ns Qrr Reverse Recovery Charge - 42 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1 mH, IAS = 3.18 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 6.8 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. |
Podobny numer części - FDD1600N10ALZD |
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Podobny opis - FDD1600N10ALZD |
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