 |
Zakładka z wyszukiwarką danych komponentów |
|
|
Zakładka z wyszukiwarką danych komponentów |
|
BUZ21 Arkusz danych(PDF) 2 Page - Intersil Corporation |
|
||||||||||||||||||||||||||||||
BUZ21 Arkusz danych(HTML) 2 Page - Intersil Corporation |
|
|
2 / 6 page  2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified BUZ21 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 100 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V Continuous Drain Current, TC = 55 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 19 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 75 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 W Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 230 mJ Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 100 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V Zero Gate Voltage Drain Current IDSS TJ = 25 oC, V DS = 100V, VGS = 0V - 20 250 µA TJ = 125 oC, V DS = 100V, VGS = 0V - 100 1000 µA Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 9A, VGS = 10V (Figure 8) - 0.09 0.1 Ω Forward Transconductance (Note 2) gfs VDS = 25V, ID = 9A (Figure 11) 4 8 - S Turn-On Delay Time td(ON) VCC = 30V, ID ≈ 3A, VGS = 10V, RGS =50Ω, RL = 10 Ω. (Figures 16, 17) -3045 ns Rise Time tr -5075 ns Turn-Off Delay Time td(OFF) - 170 220 ns Fall Time tf - 80 110 ns Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 1500 2000 pF Output Capacitance COSS - 450 700 pF Reverse Transfer Capacitance CRSS - 150 240 pF Thermal Resistance Junction to Case RθJC ≤ 1.67 oC/W Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current ISD TC = 25 oC- - 19 A Pulsed Source to Drain Current ISDM TC = 25 oC- - 75 A Source to Drain Diode Voltage VSD TJ = 25 oC, I SD = 38A, VGS = 0V - 1.5 2.1 V Reverse Recovery Time trr TJ = 25 oC, I SD = 19A, dISD/dt = 100A/µs, VR = 30V - 200 - ns Reverse Recovery Charge QRR - 0.25 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25 oC, L = 440µH, RG = 50Ω, IPEAK = 28A. (See Figures 14 and 15). BUZ21 |
Podobny numer części - BUZ21 |
|
Podobny opis - BUZ21 |
|
|
|
Link URL |
| Polityka prywatności |
| ALLDATASHEET.PL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Polish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
