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BUZ71 Arkusz danych(PDF) 2 Page - Intersil Corporation |
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BUZ71 Arkusz danych(HTML) 2 Page - Intersil Corporation |
2 / 6 page 12 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified BUZ71 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 50 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 50 V Continuous Drain Current, TC = 55 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D 14 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 56 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 40 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 100 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 50 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V Zero Gate Voltage Drain Current IDSS TJ = 25 oC, V DS = 50V, VGS = 0V - 20 250 µA TJ = 125 oC, V DS = 50V, VGS = 0V - 100 1000 µA Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 9A, VGS = 10V (Figure 8) - 0.09 0.1 Ω Forward Transconductance (Note 2) gfs VDS = 25V, ID = 9A (Figure 11) 3.0 5.2 - S Turn-On Delay Time td(ON) VCC = 30V, ID ≈ 3A, VGS = 10V, RGS = 50Ω, RL = 10Ω -2030 ns Rise Time tr -5585 ns Turn-Off Delay Time td(OFF) -7090 ns Fall Time tf - 80 110 ns Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 480 650 pF Output Capacitance COSS - 280 450 pF Reverse Transfer Capacitance CRSS - 160 280 pF Thermal Resistance Junction to Case RθJC ≤ 3.1 oC/W Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current ISD TC = 25 oC- - 14 A Pulsed Source to Drain Current ISDM TC = 25 oC- - 56 A Source to Drain Diode Voltage VSD TJ = 25 oC, I SD = 28A, VGS = 0V, (Figure 12) - 1.6 1.8 V Reverse Recovery Time trr TJ = 25 oC, I SD = 14A, dISD/dt = 100A/µs, VR = 30V - 120 - ns Reverse Recovery Charge QRR - 0.15 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 10V, starting TJ = 25 oC, L = 820µH, IPEAK = 14A. (See Figures 14 and 15). BUZ71 |
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