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2SD1280-T Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1280-T Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SD1280 ■ Features ● Satisfactory operation performances at high efficiency with the low-voltage power supply. ● Low collector to emitter saturation voltage VCE(sat) ● Complementary to 2SB956 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse ICP 2 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA, IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 5 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50mA 1.2 hFE(1) VCE= 2V, IC= 500mA 90 150 360 hFE(2) VCE= 2V, IC= 1.5 A 50 100 Collector output capacitance Cob VCB = 6V, IE = 0, f = 1MHz 18 pF Transition frequency fT VCE= 6V, IE= -50mA,f=200MHz 150 MHz DC current gain V V uA ■ Classification of hfe(1) Type 2SD1280-Q 2SD1280-R 2SD1280-S 2SD1280-T Range 90-155 130-210 180-280 250-360 Marking RQ RR RS RT |
Podobny numer części - 2SD1280-T |
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Podobny opis - 2SD1280-T |
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