FDT86244 datasheet(3/5 Pages) KEXIN

Numer części	FDT86244

Szczegółowy opis	N-Channel Enhancement MOSFET

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Producent	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

N-Channel Enhancement MOSFET

FDT86244

■

Typical Characterisitics

Figure 1.

0

1

2

3

4

5

0

3

6

9

12

VGS = 10 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 5 V

VGS = 6 V

VGS = 5.5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

On Region Characteristics

Figure2.

0

3

6

9

12

0

1

2

3

4

VGS = 10 V

VGS = 5.5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

VGS = 6 V

VGS = 5 V

NormalizedOn-Resistance

vs Drain Current and Gate Voltage

Figure3. Normalized On Resistance

-75 -50 -25

0

25

50

75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

ID = 2.8 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

Figure 4.

4

5

6

7

8

9

10

0

100

200

300

400

500

TJ = 125 oC

ID = 2.8 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

On-Resistance vs Gate to

Source Voltage

Figure 5. Transfer Characteristics

2

3

4

5

6

7

0

3

6

9

12

TJ = 150 oC

VDS = 5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs Source Current

Podobny numer części - FDT86244

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FDT86244 Arkusz danych(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

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