MTB050N15J3 datasheet(2/9 Pages) CYSTEKEC

Numer części	MTB050N15J3

Szczegółowy opis	N -Channel Enhancement Mode Power MOSFET

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Producent	CYSTEKEC [Cystech Electonics Corp.]

Strona internetowa	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C979J3

Issued Date : 2014.08.14

Revised Date : 2015.03.02

Page No. : 2/9

MTB050N15J3

CYStek Product Specification

Absolute Maximum Ratings (TC=25°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

150

Gate-Source Voltage

VGS

±

20

V

Continuous Drain Current @ TC=25

°C, VGS=10V

20

Continuous Drain Current @ TC=100

°C, VGS=10V

ID

14

Continuous Drain Current @ TA=25

°C, VGS=10V

*2

4.8

Continuous Drain Current @ TA=100

°C, VGS=10V

*2

3.0

Continuous Drain Current @ TA=25

°C, VGS=10V

*3

3.9

Continuous Drain Current @ TA=100

°C, VGS=10V

*3

IDSM

2.5

Pulsed Drain Current *1

IDM

54

Avalanche Current

IAS

9.8

A

Avalanche Energy @ L=12mH, ID=9.8A, RG=25Ω

EAS

576

mJ

Total Power Dissipation @TC=25℃

50

Total Power Dissipation @TC=100℃

PD

25

Total Power Dissipation @TA=25℃

*2

2.5

Total Power Dissipation @TA=100℃

*2

1.0

Total Power Dissipation @TA=25℃

*3

1.7

Total Power Dissipation @TA=100℃

*3

PDSM

0.7

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+175

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

Rth,j-c

3

Thermal Resistance, Junction-to-ambient, max

*2

50

Thermal Resistance, Junction-to-ambient, max

*3

Rth,j-a

75

°C/W

Note : *1

. Pulse width limited by maximum junction temperature

*2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper.

*3. When the device is on the minimum pad size recommended.

*4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful

in setting the upper dissipation limit for cases where additional heatsinking is used.

*5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value

in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may

be used if the PCB allows it.

Characteristics (Tc=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

150

-

V

VGS=0V, ID=250μA

∆BVDSS/∆Tj

-

0.15

-

V/

°C

Reference to 25

°C, ID=250μA

VGS(th)

1.0

-

2.5

V

VDS =VGS, ID=250μA

GFS *1

-

47

-

S

VDS =5V, ID=15A

IGSS

-

±

100

nA

VGS=±20V, VDS=0V

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