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MTB110P10F3 Arkusz danych(PDF) 2 Page - Cystech Electonics Corp.

Numer części MTB110P10F3
Szczegółowy opis  P-Channel Enhancement Mode Power MOSFET
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Producent  CYSTEKEC [Cystech Electonics Corp.]
Strona internetowa  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB110P10F3 Arkusz danych(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C968F3
Issued Date : 2014.08.05
Revised Date :
Page No. : 2/9
MTB110P10F3
CYStek Product Specification
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-100
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current @ TC=25C, VGS=-10V
ID
-23
A
Continuous Drain Current @ TC=100C, VGS=-10V
-16
Pulsed Drain Current
(Note 3)
IDM
-76
Continuous Drain Current @ TA=25C , VGS=10V
(Note 2)
IDSM
-3.0
Continuous Drain Current @ TA=70C , VGS=10V
(Note 2)
-2.4
Avalanche Current
(Note 3)
IAS
-11
Avalanche Energy @ L=7.1mH, ID=-11A, RG=25Ω
(Note 2)
EAS
430
mJ
Repetitive Avalanche Energy@ L=0.1mH
(Note 3)
EAR
14
Power Dissipation
TC=25°C
(Note 1)
PD
140
W
TC=100°C
(Note 1)
70
Power Dissipation
TA=25°C
(Note 2)
PDSM
2
W
TA=70°C
(Note 2)
1.3
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
1.1
C/W
Thermal Resistance, Junction-to-ambient, max
(Note 1)
62
C/W
Note : 1
.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3
. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
5
. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.


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