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MTB08N04J3-0-T3-G Arkusz danych(PDF) 4 Page - Cystech Electonics Corp. |
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MTB08N04J3-0-T3-G Arkusz danych(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C892J3 Issued Date : 2014.05.29 Revised Date : Page No. : 4/9 MTB08N04J3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 20 40 60 80 100 120 140 02468 10 VDS, Drain-Source Voltage(V) 10V, 9V, 8V, 7V, 6V VGS=4V VGS=4.5V VGS=3.5V VGS=5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 1 10 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=3V VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 04 8 12 16 2 IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 10 20 30 40 50 60 70 80 90 100 02 4 6 8 10 VGS, Gate-Source Voltage(V) ID=15A Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, ID=15A RDSON @ Tj=25°C : 5.4mΩ typ. |
Podobny numer części - MTB08N04J3-0-T3-G |
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Podobny opis - MTB08N04J3-0-T3-G |
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