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IRF150 Arkusz danych(PDF) 1 Page - Intersil Corporation |
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IRF150 Arkusz danych(HTML) 1 Page - Intersil Corporation |
1 / 7 page 1 File Number 1824.3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF150 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly Developmental Type TA17421. Features • 40A, 100V •rDS(ON) = 0.055Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-204AE Ordering Information PART NUMBER PACKAGE BRAND IRF150 TO-204AE IRF150 NOTE: When ordering, include the entire part number. G D S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) Data Sheet March 1999 |
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