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IRF237 Arkusz danych(PDF) 3 Page - Intersil Corporation

Numer części IRF237
Szczegółowy opis  8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
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Producent  INTERSIL [Intersil Corporation]
Strona internetowa  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF237 Arkusz danych(HTML) 3 Page - Intersil Corporation

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5-3
IRF234, IRF235, IRF236, IRF237
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11)
-
600
-
pF
Output Capacitance
COSS
-
180
-
pF
Reverse Transfer Capacitance
CRSS
-52
-
pF
Internal Drain Inductance
LD
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured From The
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad
-
12.5
-
nH
Therma Resistance Junction to Case
RθJC
-
-
1.67
oC/W
Therma Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
IS
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
8.1
A
Pulse Source to Drain Current
(Note 3)
ISDM
-
-
32
A
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25
oC, I
SD = 8.1A, VGS = 0V, (Figure 13)
-
-
2.0
V
Reverse Recovery Time
trr
TJ = 25
oC, I
SD = 8.1A, dISD/dt = 100A/µs
92
180
390
ns
Reverse Recovered Charge
QRR
TJ = 25
oC, I
SD = 8.1A, dISD/dt = 100A/µs
0.63
1.3
2.7
µC
NOTES:
2. Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25
oC, L = 4.5mH, R
G = 25Ω, peak IAS = 8.1A. See Figures 15, 16.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
LS
LD
G
D
S
G
D
S


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