FDG6301N datasheet(1/4 Pages) KEXIN

Numer części	FDG6301N

Szczegółowy opis	Dual N-Channel MOSFET

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MOSFET

Dual N-Channel MOSFET

FDG6301N (KDG6301N)

■

Features

●

VDS (V) = 25V

●

ID = 220m A (VGS = 4.5V)

●

RDS(ON) ＜ 4Ω (VGS = 4.5V)

●

RDS(ON) ＜ 5Ω (VGS = 2.7V)

●

Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

1 S

2 G1

3 D2

1 S1

2 G1

3 D2

4 S2

5 G2

6 D1

■

Absolute Maximum Ratings Ta = 25℃

Symbol

Rating

Unit

VDS

25

VGS

±

8

Continuous

220

Pulsed

650

PD

300

mW

RthJA

415

℃

/W

TJ

150

Tstg

-55 to 150

Power Dissipation

Human Body Model(100 pF / 1500 W)

ESD

mA

KV

6

V

Electrostatic Discharge Rating MIL-STD-883D

Parameter

Continuous Drain Current

ID

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Storage Temperature Range

℃

Thermal Resistance.Junction- to-Ambient

1 or 4

6 or 3

5 or 2

4 or 1

2 or 5

3 or 6

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