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BCP53 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCP53 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente BCP53 -1A , -100V PNP Silicon Medium Power Transistor 25-Jan-2011 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Collector-Emitter Voltage:VCEO= -80V Complementary types: BCP56 (NPN) CLASSIFICATION OF hFE (2) PACKAGE INFORMATION Package MPQ LeaderSize SOT-223 2.5K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1 A Collector Power Dissipation PD 1.5 W Junction Temperature Tj 150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO -100 V IC= -0.1mA , IE=0 Collector-emitter breakdown voltage V(BR)CEO -80 V IC= -1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10μA, IC=0 Collector cut-off current ICBO -100 nA VCB= -30V, IE=0 hFE (1) 63 VCE= -2V, IC= -5mA hFE (2) 63 250 VCE= -2V, IC= -150mA DC current gain 1 hFE (3) 40 VCE= -2V, IC= -500mA Collector-emitter saturation voltage 1 VCE(sat) -0.5 V IC= -500mA, IB= -50mA Base-emitter voltage 1 VBE(on) -1 V VCE= -2V, IC= -500mA Transition frequency f T 100 MHz VCE= -5V, IC= -10mA, f=100MHZ Note: 1. Pulse Test: Pulse Width≦380us, Duty Cycle≦2%. Product-Rank BCP53-10 BCP53-16 Range 63~160 100~250 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.20 6.70 G - 0.10 B 6.70 7.30 H - - C 3.30 3.70 J 0.25 0.35 D 1.42 1.90 K - - E 4.50 4.70 L 2.30 REF. F 0.60 0.82 M 2.90 3.10 SOT-223 Top View 1 2 3 4 A M B D L K F G H J E C |
Podobny numer części - BCP53_15 |
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Podobny opis - BCP53_15 |
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