IRF3710S datasheet(3/10 Pages) IRF

Numer części	IRF3710S

Szczegółowy opis	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

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Producent	IRF [International Rectifier]

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IRF3710S/L

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

1

10

100

1000

0.1

1

1 0

1 0 0

V

, D rain -to -S ourc e V o lta ge (V )

DS

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

20 µ s P U LS E W IDTH

T = 2 5°C

C

A

4.5V

1

10

100

1000

0.1

1

10

100

V

, D ra in-to-S o u rce V o lta ge (V )

DS

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

A

4.5V

20µ s P U LSE W ID T H

T

= 17 5°C

C

1

10

100

1000

45

67

8

9

1 0

T = 25°C

J

GS

V

, G ate-to -S o urce V oltag e (V )

V

= 5 0 V

20µs PULSE W ID TH

DS

A

T = 175°C

J

0.0

0.5

1.0

1.5

2.0

2.5

3.0

- 6 0

- 4 0

- 2 0

0

2 0

4 0

6 0

8 0

100 120 140 160 180

J

T

, J unc tion T em perature (°C )

V

= 1 0V

GS

A

I

= 46 A

D

Podobny numer części - IRF3710S

Producent	Numer części	Arkusz danych	Szczegółowy opis
Inchange Semiconductor ...	IRF3710S	189Kb / 2P	Isc N-Channel MOSFET Transistor
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	IRF3710STRLPBF	297Kb / 10P	Advanced Process Technology
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Podobny opis - IRF3710S

Producent	Numer części	Arkusz danych	Szczegółowy opis
International Rectifier	IRFP3710	185Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A)
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	IRFB59N10D	138Kb / 11P	Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)
	IRF3710SPBF	279Kb / 11P	HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )
	IRFP3710PBF	233Kb / 9P	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025廓 , ID = 57A )
	IRFZ44VZ	298Kb / 12P	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)
	IRFP044	170Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
	IRFZ44VZPBF	355Kb / 13P	HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )
	IRF9510S	176Kb / 6P	Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
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