N0301N_15 datasheet(5/8 Pages) RENESAS

Numer części	N0301N

Szczegółowy opis	MOS FIELD EFFECT TRANSISTOR

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Data Sheet D20202EJ1V0DS

3

N0301N

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

TA - Ambient Temperature -

°C

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0

25

50

75

100

125

150

175

Mounted on 2500 mm

2 x 35 μ m

Coper Pad Connected to

Drain Electrode, t

≤ 5 sec

TA - Ambient Temperature -

°C

FORWARD BIAS SAFE OPERATING AREA

0.01

0.1

1

10

100

0.1

1

10

100

TA = 25

°C

Single Pulse

ID(DC)

ID(pulse)

Mounted on FR-4 board of

50 mm x 50 mm x 1.6 mm,

copper foil 50 mm x 50 mm, t

≤ 5

1

1 m

1

s

1

0 m

1

s

1

00

m

1

s

PW

= 3

00

s

5 s

RD

S(o

n)

Lim

1

ite

d

(V

GS

= 1

10

V)

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

0.1

1

10

100

1000

Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm

Mounted on 2500 mm

2 x 35 μ m

Coper Pad Connected to Drain Electrode

PW - Pulse Width - s

0.1 m

1 m

10 m

100 m

1

10

100

1000

Podobny numer części - N0301N_15

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