DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3511S02

X TO Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

Document No. PG10642EJ01V0DS (1st edition)

Date Published October 2006 NS CP(N)

Printed in Japan

2006

FEATURES

• Super low noise figure and high associated gain

• Micro-X plastic (S02) package

APPLICATIONS

• X to Ku-band DBS LNB

• Other X to Ku-band communication systems

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Marking

Supplying Form

NE3511S02-T1C

NE3511S02-T1C-A

2 kpcs/reel

B

NE3511S02-T1D

NE3511S02-T1D-A

S02 (Pb-Free)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3511S02

°C)

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

4

V

Gate to Source Voltage

−3

V

Drain Current

mA

Gate Current

100

Total Power Dissipation

Note

165

mW

Channel Temperature

+125

°C

Storage Temperature

−65 to +125

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PCB