SM220MH_15 datasheet(1/2 Pages) SECOS

Numer części	SM220MH

Szczegółowy opis	2.0 Amp Surface Mount Schottky Barrier Rectifiers

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Producent	SECOS [SeCoS Halbleitertechnologie GmbH]

Strona internetowa	http://www.secosgmbh.com

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SM220MH~SM2100MH

20 ~ 100 V

2.0 Amp Surface Mount Schottky Barrier Rectifiers

Elektronische Bauelemente

16-Jul-2010 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Cathode



Anode

RoHS Compliant Product

A suffix of “-C” specifies halogen-free and RoHS Compliant

FEATURES



Batch process design, excellent power dissipation offers.

better reverse leakage current and thermal resistance.



Low profile surface mounted application.

in order to optimize board space.



Low power loss and low forward voltage drop



High surge, high current capability, and high efficiency.



Fast switching for high efficiency.



Guard-ring for overvoltage protection.



Ultra high-speed switching



Silicon epitaxial planar chip, metal silicon junction.

PACKAGING INFORMATION



Small plastic SMD package.



Case: Molded plastic



Epoxy: UL94-V0 rate flame retardant



Weight: 0.0110 g (Approximately)

MARKING CODE

Part Number

Marking Code

Part Number

Marking Code

SM220MH

22

SM260MH

26

SM230MH

23

SM280MH

28

SM240MH

24

SM2100MH

20

SM250MH

25

MAXIMUM RATINGS (Ta = 25°C unless otherwise specified.)

PARAMETERS

SYMBOL

PART NUMBERS

UNITS

TESTING CONDITIONS

SM

220

MH

SM

230

MH

SM

240

MH

SM

250

MH

SM

260

MH

SM

280

MH

SM

2100

MH

Recurrent Peak

Reverse Voltage (Max.)

VRRM

20

30

40

50

60

80

100

V

RMS Voltage (Max.)

VRMS

14

21

28

35

42

56

70

V

Reverse Voltage (Max.)

VR

20

30

40

50

60

80

100

V

Forward Voltage (Max.)

VF

0.50

0.70

0.85

V

Forward

Rectified Current (Max.)

IO

2.0

A

See Fig.1

Peak Forward Surge Current

IFSM

50

A

8.3ms single half sine-wave

superimposed on rated load

(JEDEC method)

Reverse Current (Max.)

IR

0.5

mA

VR=VRRM, Ta=25°C

10

VR=VRRM, Ta=125°C

Thermal Resistance (Typ.)

RJA

85

°C/W

Junction to ambient

Diode Junction

Capacitance (Typ.)

CJ

160

pF

f=1MHz and applied 4V DC

reverse voltage

Storage and Operating

Temperature Range

TSTG, TJ

-65 ~ 175, -55 to 125

-65 ~ 175, -55 to 150

°C

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

3.30

3.70

D

3.10 (MAX.)

B

1.50

1.90

E

0.80 (TYP.)

C

0.60

1.00

F

0.30 (TYP.)

E

F

B

C

D

A

SOD-123MH

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