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F00087B Arkusz danych(PDF) 1 Page - Solid States Devices, Inc |
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F00087B Arkusz danych(HTML) 1 Page - Solid States Devices, Inc |
1 / 3 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00087B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF440 ___ ____ │ │ │ │ │ └ └ Screening2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package3/ J = TO-257 SFF440J 8 AMP N-Channel Power MOSFET 500 Volts 0.86 Ω Features: Rugged construction with polysilicon gate Low RDS(on) and high transconductance Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Hermetically sealed package Low inductance leads TX, TXV, S-Level screening available Replaces: IRF440 types Maximum Ratings Symbol Value Units Drain - Source Voltage VDS 500 V Gate - Source Voltage VGS ±20 V Max. Continuous Drain Current (package limited) @ 25ºC ID 6.9 A Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Maximum Thermal Resistance (Junction to Case) RθJC 2 ºC/W Total Power Dissipation @ TC = 25ºC @ TC = 55ºC PD 63 48 W NOTES: TO-257 *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Maximum current limited by package configuration 4/ Unless otherwise specified, all electrical characteristics @25 oC. |
Podobny numer części - F00087B_15 |
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Podobny opis - F00087B_15 |
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