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TS13002HV Arkusz danych(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Numer części TS13002HV
Szczegółowy opis  High Voltage NPN Transistor
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TS13002HV Arkusz danych(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TS13002HV
High Voltage NPN Transistor
2/6
Version: A14
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
900
--
--
V
Collector-Emitter Breakdown Voltage
IC =10mA, IE =0
BVCEO
450
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA, IC =0
BVEBO
9
--
--
V
Collector-Base Cutoff Current
VCB =900V, IE =0
ICBO
--
--
100
µA
Collector-Emitter Cutoff Current
VCE =450V, IC = 0
ICEO
--
--
100
µA
Emitter-Base Cutoff Current
VEB =9V, IC = 0
IEBO
--
--
100
µA
Collector-Emitter Saturation Voltage
IC=0.2A, IB=0.04A
VCE(SAT)
--
0.2
0.6
V
Base-Emitter Saturation Voltage
IC=0.2A, IB=0.04A
VBE(SAT)
0.9
1.5
V
DC Current Gain
VCE =5V, IC =5mA
hFE
15
--
--
VCE =5V, IC =100mA
25
--
40
VCE =5V, IC =300mA
20
--
40
Dynamic Characteristics
Frequency
VCE =10V, IC =0.1A
fT
5
--
--
MHz
Resistive Load Switching Time (Ratings)
Rise Time
VCC =125V, IC =0.1A
IB1=IB2=20mA
tp=25µs, D=≤1%
tr
--
--
1
µs
Storage Time
tSTG
--
2
5
µs
Fall Time
tf
--
--
1
µs
Note: pulse test: pulse width ≤300µs, duty cycle ≤2%


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