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TS13002HV Arkusz danych(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS13002HV Arkusz danych(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 6 page TS13002HV High Voltage NPN Transistor 2/6 Version: A14 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 900 -- -- V Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO 450 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 9 -- -- V Collector-Base Cutoff Current VCB =900V, IE =0 ICBO -- -- 100 µA Collector-Emitter Cutoff Current VCE =450V, IC = 0 ICEO -- -- 100 µA Emitter-Base Cutoff Current VEB =9V, IC = 0 IEBO -- -- 100 µA Collector-Emitter Saturation Voltage IC=0.2A, IB=0.04A VCE(SAT) -- 0.2 0.6 V Base-Emitter Saturation Voltage IC=0.2A, IB=0.04A VBE(SAT) 0.9 1.5 V DC Current Gain VCE =5V, IC =5mA hFE 15 -- -- VCE =5V, IC =100mA 25 -- 40 VCE =5V, IC =300mA 20 -- 40 Dynamic Characteristics Frequency VCE =10V, IC =0.1A fT 5 -- -- MHz Resistive Load Switching Time (Ratings) Rise Time VCC =125V, IC =0.1A IB1=IB2=20mA tp=25µs, D=≤1% tr -- -- 1 µs Storage Time tSTG -- 2 5 µs Fall Time tf -- -- 1 µs Note: pulse test: pulse width ≤300µs, duty cycle ≤2% |
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