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TS13002HVCTB0G Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13002HVCTB0G Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page TS13002HV High Voltage NPN Transistor 1/6 Version: A14 TO-92 PRODUCT SUMMARY BVCEO 450V BVCBO 900V IC 0.8A VCE(SAT) 0.6V @ IC=0.2A, IB=0.04A Features ● High Voltage ● High Speed Switching Block Diagram Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TS13002HVCT B0G TO-92 1kpcs / Bulk TS13002HVCT A3G TO-92 2kpcs / Ammo Note: “G” denote for Halogen Free Product Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 900 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current DC IC 0.8 A Pulse 1.6 Maximum Power Dissipation @ TC = 25 oC Ptot 0.8 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Ambient Thermal Resistance RӨJA 125 oC/W Pin Definition: 1. Emitter 2. Collector 3. Base |
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