CS202-4D datasheet(1/2 Pages) CENTRAL

Numer części	CS202-4D

Szczegółowy opis	4.0 AMP SCR 200 THRU 800 VOLTS

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Producent	CENTRAL [Central Semiconductor Corp]

Strona internetowa	http://www.centralsemi.com

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CS202-4B

CS202-4D

CS202-4M

CS202-4N

4.0 AMP SCR

200 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS202-4B series

type is an epoxy molded silicon controlled rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

CS202

SYMBOL

-4B

-4D

-4M

-4N

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

200

400

600

800

V

RMS On-State Current (TC=85°C)

IT(RMS)

4.0

A

Peak One Cycle Surge (t=10ms)

ITSM

30

A

I2t Value for Fusing (t=10ms)

I2t

4.5

A2s

Peak Gate Power (tp=20μs)

PGM

3.0

W

Average Gate Power Dissipation

PG(AV)

0.2

W

Peak Gate Current (tp=20μs)

IGM

1.2

A

Critical Rate of Rise of On-State Current

di/dt

50

A/μs

Storage Temperature

Tstg

-40 to +150

°C

Junction Temperature

TJ

-40 to +125

°C

Thermal Resistance

ΘJA

80

°C/W

Thermal Resistance

ΘJC

7.5

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ

10

μA

IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C

200

μA

IGT

VD=12V, RL=10Ω

20

38

200

μA

IH

IT=50mA, RGK=1.0KΩ

0.25

2.0

mA

VGT

VD=12V, RL=10Ω

0.55

0.8

V

VTM

ITM=8.0A, tp=380μs

1.6

1.8

V

dv/dt

VD=⅔ VDRM, RGK=1.0KΩ, TC=125°C

10

V/μs

TO-202 CASE

R4 (23-January 2012)

www.centr a lsemi.com

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