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IRF2903ZLPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF2903ZLPBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 11 page  07/22/10 www.irf.com 1 HEXFET® Power MOSFET This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitiveavalancherating.Thesefeaturescombine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Description l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Features IRF2903ZSPbF IRF2903ZLPbF VDSS = 30V RDS(on) = 2.4mΩ ID = 75A S D G GD S Gate Drain Source D2Pak TO-262 S D G D S D G D Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energy d mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.65 RθJA Junction-to-Ambient j ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) ij ––– 40 -55 to + 175 300 (1.6mm from case ) 231 1.54 ± 20 Max. 235 166 1020 75 820 231 See Fig.12a, 12b, 15, 16 PD - 96098A |
Podobny numer części - IRF2903ZLPBF |
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Podobny opis - IRF2903ZLPBF |
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