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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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KDR728E Arkusz danych(PDF) 1 Page - KEC(Korea Electronics) |
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KDR728E Arkusz danych(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2014. 3. 31 1/2 SEMICONDUCTOR TECHNICAL DATA KDR728E SCHOTTKY BARRIER TYPE DIODE Revision No : 3 LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES ・Low Forward Voltage : V F(2)=0.42(Typ.) ・Small Package : ESC. MAXIMUM RATING (Ta=25 ℃) 1. ANODE 2. CATHODE ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 D C 1 2 E F 0.13 0.05 F G + _ + _ + _ + _ + _ + _ 0.20 0.10 + _ * : Mounted on a glass epoxy circuit board of 20 ×20mm, pad dimension of 4 ×4mm. ELECTRICAL CHARACTERISTICS (Ta=25 ℃) Type Name Marking T U CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 30 V Reverse Voltage VR 30 V Maximum (Peak) Forward Current IFM 150 mA Average Forward Current IO 30 mA Surge Current (10ms) IFSM 200 mA Power Dissipation PD 150 * mW Junction Temperature Tj 125 ℃ Storage Temperature Range Tstg -55 ～125 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) IF=1mA - 0.3 0.4 V VF(2) IF=30mA - 0.42 0.55 Reverse Current IR VR=30V - - 300 μA Total Capacitance CT VR=1V, f=1MHz - 6.5 - pF |
Podobny numer części - KDR728E_15 |
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Podobny opis - KDR728E_15 |
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