MTB11N03BV8 datasheet(5/9 Pages) CYSTEKEC

Numer części	MTB11N03BV8

Szczegółowy opis	N-Channel Logic Level Enhancement Mode Power MOSFET

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Producent	CYSTEKEC [Cystech Electonics Corp.]

Strona internetowa	http://www.cystekec.com

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5 / 9 page

CYStech Electronics Corp.

Spec. No. : CA00V8

Issued Date : 2015.05.25

Revised Date :

Page No. : 5/9

MTB11N03BV8

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1

1

10

100

VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

f=1MHz

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=250

μA

ID=1mA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

100

0.001

0.01

0.1

1

10

100

ID, Drain Current(A)

VDS=5V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

04

8

12

16

2

Qg, Total Gate Charge(nC)

0

VDS=15V

ID=19A

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.1

1

10

100

VDS, Drain-Source Voltage(V)

DC

10ms

100ms

1ms

100

μs

Limited by

RDS(ON)

TC=25°C, Tj=150°C

VGS=10V,RθJA=36°C/W

Single Pulse

1s

Maximum Drain Current vs Junction Temperature

0

2

4

6

8

10

12

14

16

18

25

50

75

100

125

150

175

Tj, Junction Temperature(°C)

TA=25°C, VGS=10V, RθJA=36°C/W

Podobny numer części - MTB11N03BV8

Producent	Numer części	Arkusz danych	Szczegółowy opis
Cystech Electonics Corp...	MTB11N03BQ8	405Kb / 9P	N-Channel Logic Level Enhancement Mode Power MOSFET
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