IRLS3036PBF datasheet(3/10 Pages) IRF

Numer części	IRLS3036PBF

Szczegółowy opis	High Efficiency Synchronous Rectification in SMPS

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IRLS/SL3036PbF

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Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

1

2

3

4

5

6

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

TJ = 25°C

TJ = 175°C

VDS = 25V

≤60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

ID = 165A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

VGS

TOP

15V

10V

4.5V

4.0V

3.5V

3.3V

3.0V

BOTTOM

2.7V

≤60µs PULSE WIDTH

Tj = 25°C

2.7V

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

10

100

1000

2.7V

≤60µs PULSE WIDTH

Tj = 175°C

VGS

TOP

15V

10V

4.5V

4.0V

3.5V

3.3V

3.0V

BOTTOM

2.7V

0

20

40

60

80

100

120

QG, Total Gate Charge (nC)

0.0

1.0

2.0

3.0

4.0

5.0

VDS= 48V

VDS= 30V

ID= 165A

Podobny numer części - IRLS3036PBF

Producent	Numer części	Arkusz danych	Szczegółowy opis
International Rectifier	IRLS3036PBF	360Kb / 10P	HEXFET Power MOSFET

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