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TPA3112D1-Q1 Arkusz danych(PDF) 5 Page - Texas Instruments |
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TPA3112D1-Q1 Arkusz danych(HTML) 5 Page - Texas Instruments |
5 / 32 page TPA3112D1-Q1 www.ti.com SLOS793B – SEPTEMBER 2012 – REVISED SEPTEMBER 2015 6.4 Thermal Information TPA3112D1-Q1 THERMAL METRIC(1)(2) PWP (HTSSOP) UNIT 28 PINS RθJA Junction-to-ambient thermal resistance 30.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 33.5 °C/W RθJB Junction-to-board thermal resistance 17.5 °C/W ψJT Junction-to-top characterization parameter 0.9 °C/W ψJB Junction-to-board characterization parameter 7.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.9 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. (2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator 6.5 DC Characteristics TA = –40°C to 125°C, VCC = 24 V, RL = 8 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Class-D output offset voltage (measured | VOS | VI = 0 V, Gain = 36 dB 1.5 15 mV differentially) ICC Quiescent supply current SD = 2 V, no load, PVCC = 21 V 40 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load, PVCC = 21 V 400 µA High side 240 IO = 500 mA, rDS(on) Drain-source on-state resistance m Ω TJ = 25°C Low side 240 GAIN0 = 0.8 V 19 20 21 GAIN1 = 0.8 V dB GAIN0 = 2 V 25 26 27 G Gain GAIN0 = 0.8 V 31 32 33 GAIN1 = 2 V dB GAIN0 = 2 V 35 36 37 tON Turn-on time SD = 2 V 10 ms tOFF Turn-off time SD = 0.8 V 2 μs GVDD Gate Drive Supply IGVDD = 2 mA 6.5 6.9 7.3 V 6.6 DC Characteristics TA = –40°C to 125°C, VCC = 12 V, RL = 8 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Class-D output offset voltage (measured | VOS | VI = 0 V, Gain = 36 dB 1.5 15 mV differentially) ICC Quiescent supply current SD = 2 V, no load, PVCC = 12 V 20 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load, PVCC = 12 V 200 µA High side 240 IO = 500 mA, rDS(on) Drain-source on-state resistance m Ω TJ = 25°C Low side 240 GAIN0 = 0.8 V 19 20 21 GAIN1 = 0.8 V dB GAIN0 = 2 V 25 26 27 G Gain GAIN0 = 0.8 V 31 32 33 GAIN1 = 2 V dB GAIN0 = 2 V 35 36 37 tON Turn-on time SD = 2 V 10 ms tOFF Turn-off time SD = 0.8 V 2 μs GVDD Gate Drive Supply IGVDD = 2 mA 6.5 6.9 7.3 V Output Voltage maximum under PLIMIT PLIMIT VPLIMIT = 2.0 V; VI = 6-V differential 6.75 7.90 8.75 V control Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPA3112D1-Q1 |
Podobny numer części - TPA3112D1-Q1_15 |
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Podobny opis - TPA3112D1-Q1_15 |
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