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6N60KG-TMS2-T Arkusz danych(PDF) 4 Page - Unisonic Technologies |
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6N60KG-TMS2-T Arkusz danych(HTML) 4 Page - Unisonic Technologies |
4 / 7 page 6N60K-MT Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R205-021.d ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 V VDS=600V, VGS=0V 10 μA Drain-Source Leakage Current IDSS VDS=480V, VGS=0V, TJ =125°C 10 μA Forward VG=30V, VDS=0V 100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.1A 1.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 540 pF Output Capacitance COSS 97 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1.0 MHz 11 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 60 ns Turn-On Rise Time tR 66 ns Turn-Off Delay Time tD(OFF) 120 ns Turn-Off Fall Time tF VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) 64 ns Total Gate Charge QG 23 28 nC Gate-Source Charge QGS 6.7 nC Gate-Drain Charge QGD VDS=50V, ID=1.3A, VGS=10V (Note 1, 2) 5.7 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=6.2 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 6.2 A Maximum Pulsed Drain-Source Diode Forward Current ISM 24.8 A Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. |
Podobny numer części - 6N60KG-TMS2-T |
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Podobny opis - 6N60KG-TMS2-T |
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