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G11135-256DD Arkusz danych(PDF) 8 Page - Hamamatsu Corporation

Numer części G11135-256DD
Szczegółowy opis  Single video line (256/512 pixels) near infrared image sensor (0.95 to 1.7 m)
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Producent  HAMAMATSU [Hamamatsu Corporation]
Strona internetowa  http://www.hamamatsu.com
Logo HAMAMATSU - Hamamatsu Corporation

G11135-256DD Arkusz danych(HTML) 8 Page - Hamamatsu Corporation

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InGaAs linear image sensors
G11135-256DD, G11135-512DE
8
Terminal name
Input/Output
Function and recommended connection
Remark
PDN
Input
Cathode bias terminal for InGaAs photodiode
4.0 V
AD_sp
Output
Digital start signal for A/D conversion
0 to 5 V
Cf_select
Input*9
Signal for selecting feedback capacitance (integration capacitance) on CMOS chip
0 V or 5 V
Thermistor
Output
Thermistor for monitoring temparature inside the package
-
AD_trig
Output
Sampling synchronous signal for A/D conversion
0 to 5 V
RESET
Input
Reset pulse for initializing the feedback capacitance in the charge amplifier
formed in the CMOS chip. Integration time is determined by the high period of
this pulse.
0 to 5 V
CLK
Input
Clock pulse for operating the CMOS shift register
0 to 5 V
INP
Input
Input stage amplifier reference voltage. Supply voltage for operating the signal
processing circuit in the CMOS chip.
4.0 V
Vinp
Input
Video line reset voltage. Supply voltage for operating the signal processing
circuit in the CMOS chip.
4.0 V
Fvref
Input
Differential amplifier reference voltage. Supply voltage for operating the signal
processing circuit in the CMOS chip.
1.2 V
VIDEO
Output
Differential amplifier output. Analog video signal.
1.25 to 3.85 V
Vdd
Input
Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V)
5 V
GND
Input
Grand for the signal processing circuit in the CMOS chip (0 V)
0 V
*
9: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below.
Pin connections
Conversion efficiency
Cf_select
160 nV/e-
High
930 nV/e-
Low
Low: 0 V (GND), High: 5 V (Vdd)


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