MTV20N50E

http://onsemi.com

6

Figure 8. Gate−To−Source and Drain−To−Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

Figure 10. Stored Charge

0.54

0.7

0.86

0

16

20

12

0

0.78

0.62

8

4

110

1

1000

100

10

500

400

300

200

100

0

0

8

6

0

10

4

2

10

20

80

90

100

30

40

50

60

70

Q3

Q1

Q2

QT

Figure 11. Diode Forward Voltage versus Curre

0.74

0.9

0.82

0.66

0.5

0.58

0

4

8

121620

dlS/dt = 100 A/μs

1

3

4

5

7

2

26

18

6

0

14

10

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define

the maximum simultaneous drain−to−source voltage and

drain current that a transistor can handle safely when it is

forward biased. Curves are based upon maximum peak

Peak repetitive pulsed power limits are determined by using

the thermal response data in conjunction with the

procedures discussed in AN569, “Transient Thermal

Resistance−General Data and Its Use.”

Switching between the off−state and the on−state may

traverse any load line provided neither rated peak current

total power averaged over a complete switching cycle must

A Power MOSFET designated E−FET can be safely used

in switching circuits with unclamped inductive loads. For

reliable operation, the stored energy from circuit inductance

dissipated in the transistor while in avalanche must be less

than the rated limit and adjusted for operating conditions

differing from those specified. Although industry practice is

to rate in terms of energy, avalanche energy capability is not

a constant. The energy rating decreases non−linearly with

an increase of peak current in avalanche and peak junction

temperature.

Although many E−FETs can withstand the stress of

drain−to−source avalanche at currents up to rated pulsed

The energy rating must be derated for temperature as

shown in the accompanying graph (Figure 12). Maximum

assumed to equal the values indicated.