74LVC125A datasheet(5/9 Pages) ONSEMI

Numer części	74LVC125A

Szczegółowy opis	Low-Voltage CMOS Quad 2-Input XOR Gate

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74LVC125A

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AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)

Symbol

Parameter

Conditions

−40

5C to +855C

−40

5C to +1255C

Unit

Min

Typ1

Max

Min

Typ1

Max

tpd

Propagation Delay (Note 5)

Dn to On

VCC = 1.2 V

−

12.0

−

ns

VCC = 1.65 V to 1.95 V

1.5

5.4

11.0

1.5

−

12.8

VCC = 2.3 V to 2.7 V

1.0

2.9

5.7

1.0

−

6.7

VCC = 2.7 V

1.5

2.8

5.5

1.5

−

7.0

VCC = 3.0 V to 3.6 V

1.0

2.5

4.8

1.0

−

6.0

ten

Enable Time (Note 6)

OEn to On

VCC = 1.2 V

−

16.0

−

ns

VCC = 1.65 V to 1.95 V

1.0

5.0

12.2

1.0

−

14.2

VCC = 2.3 V to 2.7 V

0.5

2.9

6.8

0.5

−

7.9

VCC = 2.7 V

1.5

3.1

6.6

1.5

−

8.5

VCC = 3.0 V to 3.6 V

1.0

2.3

5.4

1.0

−

7.0

tdis

Disable Time (Note 7)

OEn to On

VCC = 1.2 V

−

7.0

−

ns

VCC = 1.65 V to 1.95 V

2.2

4.6

7.5

2.2

−

8.7

VCC = 2.3 V to 2.7 V

0.5

2.6

4.2

0.5

−

5.0

VCC = 2.7 V

1.5

3.1

5.0

1.5

−

6.5

VCC = 3.0 V to 3.6 V

1.0

3.2

4.6

1.0

−

6.0

tsk(0)

Output Skew Time (Note 8)

−

1

−

1.5

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Typical values are measured at TA = 25

°C and VCC = 3.3 V, unless stated otherwise.

5. tpd is the same as tPLH and tPHL.

6. ten is the same as tPZL and tPZH.

7. tdis is the same as tPLZ and tPHZ.

8. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.

DYNAMIC SWITCHING CHARACTERISTICS

Symbol

Characteristic

Condition

TA = +25°C

Unit

Min

Typ

Max

VOLP

Dynamic LOW Peak Voltage (Note 9)

VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V

0.8

0.6

V

VOLV

Dynamic LOW Valley Voltage (Note 9)

VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V

−0.8

−0.6

V

9. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is

measured in the LOW state.

CAPACITIVE CHARACTERISTICS

Symbol

Parameter

Condition

Typical

Unit

CIN

Input Capacitance

VCC = 3.3 V, VI = 0 V or VCC

4.0

pF

COUT

Output Capacitance

VCC = 3.3 V, VI = 0 V or VCC

5.0

pF

CPD

Power Dissipation Capacitance

(Note 10)

Per input; VI = GND or VCC

pF

VCC = 1.65 V to 1.95 V

6.0

VCC = 2.3 V to 2.7 V

9.4

VCC = 3.0 V to 3.6 V

12.4

10. CPD is used to determine the dynamic power dissipation (PD in mW).

PD = CPD x VCC2 x fi x N + S (CL x VCC2 x fo) where:

fi = input frequency in MHz; fo = output frequency in MHz

CL = output load capacitance in pF VCC = supply voltage in Volts

N = number of outputs switching

S(CL x VCC2 x fo) = sum of the outputs.

Podobny numer części - 74LVC125A

Producent	Numer części	Arkusz danych	Szczegółowy opis
NXP Semiconductors	74LVC125A	94Kb / 10P	Quad buffer/line driver with 5-volt tolerant inputs/outputs 3-State 1998 Apr 28
STMicroelectronics	74LVC125A	76Kb / 9P	LOW VOLTAGE CMOS QUAD BUS BUFFERS (3-STATE) HIGH PERFORMANCE February 2002
STMicroelectronics	74LVC125A	239Kb / 12P	LOW VOLTAGE CMOS QUAD BUS BUFFERS (3-STATE) HIGH PERFORMANCE
Diodes Incorporated	74LVC125A	231Kb / 10P	QUADRUPLE 3-STATE BUFFERS
NXP Semiconductors	74LVC125A	124Kb / 16P	Quad buffer/line driver with 5 V tolerant input/outputs; 3-state Rev. 7-11 April 2013

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