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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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FW217A Arkusz danych(PDF) 2 Page - ON Semiconductor |
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FW217A Arkusz danych(HTML) 2 Page - ON Semiconductor |
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2 / 7 page  FW217A No.8994-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 35 V Zero-Gate Voltage Drain Current IDSS VDS=35V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.7 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=6A 3 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=6A, VGS=10V 30 39 mΩ RDS(on)2 ID=3A, VGS=4.5V 50 70 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 470 pF Output Capacitance Coss 70 pF Reverse Transfer Capacitance Crss 35 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8ns Rise Time tr 34 ns Turn-OFF Delay Time td(off) 31 ns Fall Time tf 30 ns Total Gate Charge Qg VDS=20V, VGS=10V, ID=6A 10 nC Gate-to-Source Charge Qgs 2nC Gate-to-Drain “Miller” Charge Qgd 2nC Diode Forward Voltage VSD IS=6A, VGS=0V 0.84 1.2 V Switching Time Test Circuit Ordering Information Device Package Shipping memo FW217A-TL-2W SOIC8 2,500pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P.G 50Ω G S D ID=6A RL=3Ω VDD=20V VOUT VIN 10V 0V VIN FW217A |
Podobny numer części - FW217A |
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Podobny opis - FW217A |
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