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MTB015N10QH8 Arkusz danych(PDF) 5 Page - Cystech Electonics Corp. |
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MTB015N10QH8 Arkusz danych(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C141H8 Issued Date : 2015.10.13 Revised Date : Page No. : 5/9 MTB015N10QH8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) Pulsed Ta=25°C VDS=10V VDS=15V Gate Charge Characteristics 0 2 4 6 8 10 0 6 12 18 24 30 36 42 48 54 60 Total Gate Charge---Qg(nC) ID=15A VDS=80V VDS=20V VDS=50V Maximum Safe Operating Area 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100 μs 1s RDS(ON) Limit TC=25°C, Tj=150°C, VGS=10V, RθJC=2.5°C/W Single Pulse Maximum Drain Current vs Case Temperature 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175 TC, Case Temperature(°C) VGS=10V, RθJC=2.5°C/W |
Podobny numer części - MTB015N10QH8 |
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Podobny opis - MTB015N10QH8 |
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