MTB110P08KN3 datasheet(1/9 Pages) CYSTEKEC

Numer części	MTB110P08KN3

Szczegółowy opis	-80V P-Channel Enhancement Mode MOSFET

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Producent	CYSTEKEC [Cystech Electonics Corp.]

Strona internetowa	http://www.cystekec.com

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1 / 9 page

CYStech Electronics Corp.

Spec. No. : C123N3

Issued Date : 2015.11.09

Revised Date :

Page No. : 1/9

MTB110P08KN3

CYStek Product Specification

-80V P-Channel Enhancement Mode MOSFET

MTB110P08KN3 BVDSS

-80V

ID @ VGS=-10V, TA=25°C

-2.2A

RDSON@VGS=-10V, ID=-2A

104mΩ(typ)

RDSON@VGS=-4.5V,ID=-1A

141mΩ(typ)

Features

• Low gate charge

• Compact and low profile SOT-23 package

• Advanced trench process technology

• High density cell design for ultra low on resistance

• ESD protected gate

• Pb-free lead plating package

Symbol

Outline

Ordering Information

Device

Package

Shipping

MTB110P08KN3-0-T1-G

SOT-23

(Pb-free lead plating and halogen-free package)

3000 pcs / tape & reel

MTB110P08KN3

SOT-23

D

S

G：Gate

S：Source

D：Drain

G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T1 : 3000 pcs / tape & reel, 7” reel

Product rank, zero for no rank products

Product name

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