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MMSF1310 Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części MMSF1310
Szczegółowy opis  N?묬hannel Power MOSFET
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMSF1310 Arkusz danych(HTML) 2 Page - ON Semiconductor

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MMSF1310
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
27
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
µAdc
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.3
4.4
2.5
Vdc
mV/
°C
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
9.5
12.5
15
19
m
Forward Transconductance (VDS = 5.0 Vdc, ID = 1.0 Adc) (Note 3.)
gFS
5.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
V
0V
Ciss
1440
2020
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 V,
f = 1.0 MHz)
Coss
680
960
Transfer Capacitance
f = 1.0 MHz)
Crss
195
280
SWITCHING CHARACTERISTICS (Note 4.)
Turn−On Delay Time
td(on)
10
20
ns
Rise Time
(VDD = 24 Vdc, ID = 10 Adc,
VGS =10Vdc
tr
36
72
Turn−Off Delay Time
VGS = 10 Vdc,
RG = 6.0 Ω) (Note 3.)
td(off)
82
164
Fall Time
RG
6.0
Ω) (Note 3.)
tf
95
190
Gate Charge
QT
48
68
nC
(VDS = 15 Vdc, ID = 10 Adc,
Q1
3.0
(VDS
15 Vdc, ID
10 Adc,
VGS = 10 Vdc) (Note 3.)
Q2
4.0
Q3
7.0
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 10 Adc, VGS = 0 Vdc) (Note 3.)
(IS = 10 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.82
0.67
1.0
Vdc
Reverse Recovery Time
trr
52
ns
(IS = 10 Adc, VGS = 0 Vdc,
ta
23
(IS
10 Adc, VGS
0 Vdc,
dIS/dt = 100 A/µs) (Note 3.)
tb
30
Reverse Recovery Stored Charge
QRR
0.05
µC
3. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Reflects typical values.
Cpk =
Max limit − Typ
3 x SIGMA
6. Repetitive rating; pulse width limited by maximum junction temperature.


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