FW389 datasheet(4/8 Pages) ONSEMI

Numer części	FW389

Szczegółowy opis	Complementary Dual Power MOSFET

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4 / 8 page

FW389

No. A2066-4/8

[Nch]

[Pch]

Total Gate Charge, Qg -- nC

VGS -- Qg

IT16914

0

1

2

3

4

5

6

7

11

8

10

8

9

46

210

0

5

1.0

7

5

3

2

10

100

7

3

2

5

7

1000

3

2

30

20

10

525

15

Drain-to-Source Voltage, VDS -- V

Ciss, Coss, Crss -- VDS

IT16913

Drain Current, ID -- A

SW Time -- ID

IT16912

IT16911

0

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

7

5

3

2

0.1

7

5

3

1.0

7

2

10

7

5

3

2

Diode Forward Voltage, VSD -- V

IS -- VSD

Drain Current, ID -- A

IT16910

f=1MHz

Ciss

Coss

Crss

0.1

1.0

2

23

57

10

35

7

2

3

5

7

2

0.1

1.0

3

5

7

10

VDS=10V

Ta=

--25

°C

75°C

VGS=0V

10

1.0

3

2

5

7

100

5

7

0.1

1.0

2

23

57

10

35

7

VDD=50V

VGS=10V

td(off)

tf

td(on)

tr

| yfs | -- ID

25°C

5

3

VDS=50V

ID=2A

0

--1

--2

--8

--5

--6

--7

--4

--3

0--1.0

--2.0

--3.0

--4.0

--0.5

--1.5

--2.5

--3.5

Drain-to-Source Voltage, VDS -- V

ID -- VDS

IT16916

0--1.0

--0.5

--1.5

--4.5

--2.5

--2.0

--3.0

--3.5

--4.0

0

--1

--3

--5

--8

--2

--4

--6

--7

Gate-to-Source Voltage, VGS -- V

ID -- VGS

IT16917

--3.5V

--4.5

V

VDS= --10V

VGS= --3.0V

[Nch]

IT16915

0.1

1.0

57

23

2

10

57

32

100

57

7

32 35

100

2

3

5

7

0.01

2

3

5

7

0.1

S O A

Drain-to-Source Voltage, VDS -- V

0.001

Operation in this

area is limited by RDS(on).

100

μs

100m

s

10ms

1m

s

2

3

5

7

2

3

5

7

3

5

7

1.0

10

100

IDP=8A(PW≤10μs)

ID=2A

DC

operation(P

W≤10s)

Ta=25

°C

Single pulse

When mounted on ceramic substrate

(2000mm2

×0.8mm) 1unit

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