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MMSF5P02HD Arkusz danych(PDF) 2 Page - ON Semiconductor |
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MMSF5P02HD Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 11 page MMSF5P02HD http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Symbol Max Unit Drain−to−Source Voltage VDSS 20 V Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 20 V Gate−to−Source Voltage − Continuous VGS ± 8.0 V 1″ SQ. FR−4 or G−10 PCB 10 seconds Thermal Resistance − Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current − Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (Note 2) RTHJA PD ID ID IDM 50 2.5 20 8.7 7.0 43.5 °C/W Watts mW/°C A A A Minimum FR−4 or G−10 PCB 10 seconds Thermal Resistance − Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current − Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (Note 2) RTHJA PD ID ID IDM 80 1.56 12.5 6.9 5.5 35 °C/W Watts mW/°C A A A Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 19 Apk, L = 5.5 mH, RG = 25 W) EAS 1000 mJ 1. Negative sign for P−Channel devices omitted for clarity. 2. Repetitive rating; pulse width limited by maximum junction temperature. |
Podobny numer części - MMSF5P02HD |
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Podobny opis - MMSF5P02HD |
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