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SB10-05P-TD-E Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części SB10-05P-TD-E
Szczegółowy opis  Schottky Barrier Diode
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Publication Order Number :
SB10-05P/D
www.onsemi.com
© Semiconductor Components Industries, LLC, 2015
February 2015 - Rev. 1
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
SB10-05P
Applications
• High Frequency Rectification (Switching Regulators, Converters, Choppers)
Features
• Low Forward Voltage (VF max=0.55V)
• Short Reverse Recovery Time (trr max=10ns)
• Low Switching Noise
• Low Leakage Current and High Reliability Due to Reliable Planar Structure
• Pb-Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25
°C
Parameter
Symbol
Conditions
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
50
V
Non-repetitive Peak Reverse Surge Voltage
VRSM
55
V
Average Output Current
IO
1A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tj
−55 to +125
°C
Storage Temperature
Tstg
−55 to +125
°C
Electrical Characteristics at Ta
= 25°C
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Reverse Voltage
VR
IR=300μA
50
V
Forward Voltage
VF
VF=1A
0.55
V
Reverse Current
IR
VR=25V
80
μA
Interterminal Capacitance
C
VR=10V, f=1MHz
52
pF
Reverse Recovery Time
trr
IF= IR=100mA, See specification Test Circuit
10
ns
Thermal Resistance
Rthj-a (1)
300
°C / W
Rthj-a (2)
Mounted on a ceramic board (250mm
2x0.8mm)
110
°C / W
Packing Type : TD
Marking
Electrical Connection
1 : Anode
2 : Cathode
3 : No Contact
SOT-89 / PCP-1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Schottky Barrier Diode
50V, 1A, Low IR, Single
TD


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