SB10-05P-TD-E datasheet(2/4 Pages) ONSEMI

Numer części	SB10-05P-TD-E

Szczegółowy opis	Schottky Barrier Diode

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SB10-05P

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2

trr Test Circuit

Forward Voltage, VF -- V

Reverse Voltage, VR -- V

IR -- VR

IF -- VF

0

10

0.4

0.6

0.8

1.0

0.2

7

5

3

2

7

5

3

7

5

2

1.0

0.1

1.2

Ta=125

°C

ID00430

0

10

2

5

1.0

2

5

0.1

2

5

0.01

2

5

0.001

5

10

20

30

40

50

60

Ta=125°

C

100°C

75°C

50°C

25°C

ID00431

Duty

≤10%

50

Ω

100

Ω

10

Ω

--5V

trr

10

μs

Reverse Voltage, VR -- V

C -- VR

Time, t -- s

IFSM -- t

7 0.01

23

7 0.1

0

52

2

3

37 1.0

5

12

14

8

4

10

6

2

HD00435

1.0

10

2

3

5

2

3

5

10

100

7

35

7

2

3

5

7

100

f=1MHz

ID00434

Average Output Current, IO -- A

PF(AV) -- IO

Peak Reverse Voltage, VRM -- V

PR(AV) -- VRM

0

0.2

0.8

1.0

1.4

1.2

0.6

0.4

0.2

0.4

0.6

1.4

1.2

1.0

0.8

ID00432

0

10

300

400

500

200

100

20

30

60

50

40

ID00433

(3)

(1)

(2)

(4)

(3)

(1)

(2)

(1)Rectangular wave

θ=60°

(2)Rectangular wave

θ=120°

(3)Rectangular wave

θ=180°

(4)Sine wave

θ=180°

θ

360

°

Rectangular

wave

180

°

360

°

Sine wave

(1)Rectangular wave

θ=300°

(2)Rectangular wave

θ=240°

(3)Rectangular wave

θ=180°

(4)Sine wave

θ=180°

θ

360

°

VR

Rectangular

wave

180

°

360

°

VR

Sine wave

IS

20ms

t

Current waveform 50Hz sine wave

Podobny numer części - SB10-05P-TD-E

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Sanyo Semicon Device	SB10-05P-TD-E	65Kb / 3P	High frequency rectification (switching regulators, converters, choppers).

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Podobny opis - SB10-05P-TD-E

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SB10-05P-TD-E Arkusz danych(PDF) 2 Page - ON Semiconductor

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Podobny opis - SB10-05P-TD-E

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