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G1033-020 Arkusz danych(PDF) 1 Page - Emcore Corporation

Numer części G1033-020
Szczegółowy opis  1310 nm GPON DFB Laser Chip
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Producent  EMCORE [Emcore Corporation]
Strona internetowa  http://www.emcore.com
Logo EMCORE - Emcore Corporation

G1033-020 Arkusz danych(HTML) 1 Page - Emcore Corporation

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DATASHEET | SEPTEMBER 2015
FIBER OPTICS
| REV 2015.09
Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice.
Applications
Uncooled PON Applications
FTTx Networks
Features
Advanced Digital Chip Design
Wide Operating Temperature Range:
-40 to +85
°C
Telcordia Technologies™ 468 Compliant
RoHS Compliant
EMCORE’s G1033-020, 1310 nm GPON DFB laser diode chip is designed to
provide the source laser for uncooled PON applications for triple-play for voice,
video and data applications. It is designed to perform the O/E and E/O
conversion in a PON or GPON system.
Performance Highlights
Parameter
Min
Typical
Max
Units
Wavelength
1310
nm
Operating Temperature Range
-40
+25
+85
°C
Optical Output Power
-
-
50
mW
Side Mode Suppression Ratio (SMSR)
52
-
-
dB
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated
for extended periods of time may effect device reliability.
Parameter
Symbol
Condition
Min
Max
Unit
Operating Temperature
Range
Top
Continuous
-40
+85
°C
Storage Temperature Range
TSTG
Continuous
-40
+100
°C
Optical Output Power
Po
Continuous
-
50
mW
Laser Reverse Voltage
Vr
Continuous
-
1
V
Continuous Operating
Current
Iop
Continuous
-
200
mA
ESD Susceptibility
1
-
-
-
500
V
1 Based on human-body model of R = 1500 Ohm and C = 100 pF. In general, ESD precautions
should be taken to avoid damage to the device
G1033-020, 1310 nm GPON DFB Laser Chip


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