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G1033-020 Arkusz danych(PDF) 1 Page - Emcore Corporation |
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G1033-020 Arkusz danych(HTML) 1 Page - Emcore Corporation |
1 / 3 page DATASHEET | SEPTEMBER 2015 FIBER OPTICS | REV 2015.09 Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice. Applications Uncooled PON Applications FTTx Networks Features Advanced Digital Chip Design Wide Operating Temperature Range: -40 to +85 °C Telcordia Technologies™ 468 Compliant RoHS Compliant EMCORE’s G1033-020, 1310 nm GPON DFB laser diode chip is designed to provide the source laser for uncooled PON applications for triple-play for voice, video and data applications. It is designed to perform the O/E and E/O conversion in a PON or GPON system. Performance Highlights Parameter Min Typical Max Units Wavelength 1310 nm Operating Temperature Range -40 +25 +85 °C Optical Output Power - - 50 mW Side Mode Suppression Ratio (SMSR) 52 - - dB Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated for extended periods of time may effect device reliability. Parameter Symbol Condition Min Max Unit Operating Temperature Range Top Continuous -40 +85 °C Storage Temperature Range TSTG Continuous -40 +100 °C Optical Output Power Po Continuous - 50 mW Laser Reverse Voltage Vr Continuous - 1 V Continuous Operating Current Iop Continuous - 200 mA ESD Susceptibility 1 - - - 500 V 1 Based on human-body model of R = 1500 Ohm and C = 100 pF. In general, ESD precautions should be taken to avoid damage to the device G1033-020, 1310 nm GPON DFB Laser Chip |
Podobny numer części - G1033-020 |
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Podobny opis - G1033-020 |
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