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LF2010-S Arkusz danych(PDF) 5 Page - LEM

Numer części LF2010-S
Szczegółowy opis  Bipolar and insulated current measurement up to 3 kA
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Producent  LEM [LEM]
Strona internetowa  http://www.lem.co.jp/HQ/en
Logo LEM - LEM

LF2010-S Arkusz danych(HTML) 5 Page - LEM

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8October2015/Version 1
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice
www.lem.com
LF 2010-S
Figure 1: Maximum measuring resistance
I
P
R
M max = NS ×
R
S max
U
C min − 1.3 V
Figure 3: Typical noise voltage density e
no
with R
M = 100 Ω
Figure 4: Typical total output current noise with
R
M = 100 Ω (primary referred, rms)
Figure 2: Typical step response (0 to 2 kA, 400 A/µs)
Typical performance characteristics
10
0
10
1
10
2
10
3
10
4
10
5
10
6
-130
-125
-120
-115
-110
-105
-100
-95
-90
-85
-80
fc (Hz)
Noise voltage spectral density of VM
Device: LF2010-test-Config-(Cint,-Cpzc)-=-(0,-5)
0
15
Time (µs)
30
45
Input 400 A/div
Output 80 mA/div
To calculate the noise in a frequency band f
1 to f2, the formula
is:
with I
no (f) read from figure 4 (typical, rms value).
Example:
What is the noise from 1 to 106 Hz?
Figure 4 gives I
no (1 Hz) = 0.2 mA and Ino (10
6
Hz) = 400 mA.
The output current noise (rms) is therefore:
I
no (f1 … f2) =
I
no (f2)
2
− I
no (f2)
2
(400 × 10−3)2 − (0.2 × 10−3)2 = 400 mA referred to primary
0
10
20
30
40
50
60
70
80
1000
1500
2000
2500
3000
IP (A)
22.8 V & 85 °C
14.25 V & 85 °C
10
0
10
1
10
2
10
3
10
4
10
5
10
6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
fc (Hz)
Device: LF2010-test-Config-(Cint,-Cpzc)-=-(0,-5)


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