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TS1109-20IDT833 Arkusz danych(PDF) 8 Page - Silicon Laboratories |
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TS1109-20IDT833 Arkusz danych(HTML) 8 Page - Silicon Laboratories |
8 / 20 page 3. Electrical Characteristics Table 3.1. Recommended Operating Conditions1 Parameter Symbol Conditions Min Typ Max Units System Specifications Operating Voltage Range VDD 1.7 — 5.25 V Common-Mode Input Range VCM VRS+, Guaranteed by CMRR 2 — 27 V Note: 1. All devices 100% production tested at TA = +25 °C. Limits over Temperature are guaranteed by design and characterization. Table 3.2. DC Characteristics1 Parameter Symbol Conditions Min Typ Max Units System Specifications No Load Input Supply Current IRS+ + IRS– See Note 2 — 0.68 1.2 µA IVDD — 0.76 1.3 µA Current Sense Amplifier Common Mode Rejection Ratio CMRR 2 V < VRS+ < 27 V 120 130 — dB Input Offset Voltage (See Note 3) VOS TA = +25 °C — ±100 ±150 µV –40 °C < TA < +85 °C — — ±200 µV VOS Hysteresis (See Note 4) VHYS TA = +25 °C — 10 — µV Gain G TS1109-20 — 20 — V/V TS1109-200 — 200 — Positive Gain Error (See Note 5) GE+ TA = +25 °C — ±0.1 ±0.6 % –40 °C < TA < +85 °C — — ±1 % Negative Gain Error (See Note 5) GE– TA = +25 °C — ±0.6 ±1 % –40 °C < TA < +85 °C — — ±1.4 % Gain Match (See Note 5) GM TA = +25 °C — ±0.6 ±1 % –40 °C < TA < +85 °C — — ±1.4 % Transfer Resistance ROUT From FILT to OUT 28 40 52.8 kΩ CSA Buffer Input Bias Current IBuffer_BIAS –40 °C < TA < +85 °C — 0.3 — nA Input referred DC Offset VBuffer_OS — — ±2.5 mV Offset Drift TCVBuffer_OS –40 °C < TA < +85 °C — 0.6 — µV/°C Input Common Mode Range VBuffer_CM –40C < TA < +85 °C 0.2 — VDD – 0.2 V Output Range VOUT(min,max) IOUT = ±150 µA 0.2 — VDD – 0.2 V Sign Comparator Parameters TS1109 Data Sheet Electrical Characteristics silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 7 |
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